A 5.25ghz Monolithic Image-rejection Mixer

نویسندگان

  • Chang-Wan Kim
  • Sang-Gug Lee
چکیده

This paper describes the implementation of the image rejection mixer block in the 5GHz frequency band using 0.18μm CMOS technology. The image rejection mixer block adopts the double-quadrature topology for high image-rejection ratio in the high frequency applications and is designed for the dual-conversion receiver. The loss of the polyphase filter in the signal path can be reduced with simple parallel resonant circuit for low DC power consumption. This image rejection mixer block consumes 42 mA from 1.8V supply voltage. The simulated result shows the power gain of 18dB, IIP3 of +2.5dBm, and NF of 7dB. The image rejection ratio is estimated >55dBc.

برای دانلود متن کامل این مقاله و بیش از 32 میلیون مقاله دیگر ابتدا ثبت نام کنید

ثبت نام

اگر عضو سایت هستید لطفا وارد حساب کاربری خود شوید

منابع مشابه

A Monolithic 5 GHz Image Reject Mixer for Wireless LAN applications

A monolithic 5 GHz image reject mixer using a 0.5-μm GaAs MESFET technology is designed and simulated. The Mixer exhibits a 13.56 dB down-conversion gain, a SSB (Single SideBand) noise figure of 11.90 dB, an input IP3 (third order intercept point) of –3.73 dBm and a P1dB (1-dB compression point) of –11.0 dBm. The critical issue in the image reject mixer is the phase accuracy and magnitude balan...

متن کامل

A Highly Integrated Ka Band Front-End Receiver

A highly integrated Ka band front-end receiver is presented. The proposed front-end receiver is developed for a Ka band passive imaging system. The design adopts single-stage heterodyne architecture at 2 GHz intermediate frequency (IF). Further, a two-layer planar technology is adopted for compact realization. The top layer of the front-end comprises of two monolithic microwave integrated circu...

متن کامل

A 150 to 220 GHz Balanced D 50 nm Metamorphic HE

A coplanar millimeter wave doubler MMIC covering the entire G-band was developed. Based on a 50 nm metamorphic HEMT technology, the circuit demonstrates an output power of more than –12 dBm between 150and 220 GHz for an input power of 0 dBm. By increasing the input power to 12 dBm an output power exceeding 0 dBm was obtained in the frequency range between 180and 220 GHz. Good fundamental reject...

متن کامل

Development of a 340-GHz Sub-Harmonic Image Rejection Mixer Using Planar Schottky Diodes

: We report on the design, fabrication and test of an integrated 320-360 GHz Sub-Harmonic Image Rejection Mixer (SHIRM) using planar Schottky diodes. The integrated circuit uses two separate anti-parallel pairs of diodes mounted onto a single quartz-based circuit. Measurement results give SSB receiver noise temperatures of 3300 K at 340 GHz, with an image rejection from 7.6 dB to 23 dB over the...

متن کامل

The Design Of Single-Ended & Differential MMIC VCOs

This paper describes design techniques for both single-ended and differential VCOs, with examples shown fabricated in GaAs MMIC processes. The potential uses and advantages of the differential over the conventional single-ended approach are discussed. Introduction Voltage Controlled Oscillators (VCOs) are widely used as signal sources in RF and microwave communication systems. Fully monolithic ...

متن کامل

ذخیره در منابع من


  با ذخیره ی این منبع در منابع من، دسترسی به آن را برای استفاده های بعدی آسان تر کنید

برای دانلود متن کامل این مقاله و بیش از 32 میلیون مقاله دیگر ابتدا ثبت نام کنید

ثبت نام

اگر عضو سایت هستید لطفا وارد حساب کاربری خود شوید

عنوان ژورنال:

دوره   شماره 

صفحات  -

تاریخ انتشار 2003